virtual source model Search Results


virtual source (vs) model  (COMSOL Inc)
90
COMSOL Inc virtual source (vs) model
Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the <t>source/drain</t> terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the <t>Virtual</t> Source (VS) <t>model</t> and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length
Virtual Source (Vs) Model, supplied by COMSOL Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/virtual+source+model/pmc06673702-93-26-47?v=COMSOL+Inc
Average 90 stars, based on 1 article reviews
virtual source (vs) model - by Bioz Stars, 2026-06
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virtual source model (vsm) approximation for the source modeling  (TomoTherapy)
90
TomoTherapy virtual source model (vsm) approximation for the source modeling
Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the <t>source/drain</t> terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the <t>Virtual</t> Source (VS) <t>model</t> and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length
Virtual Source Model (Vsm) Approximation For The Source Modeling, supplied by TomoTherapy, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/virtual+source+model/pm26376697-17-42-35?v=TomoTherapy
Average 90 stars, based on 1 article reviews
virtual source model (vsm) approximation for the source modeling - by Bioz Stars, 2026-06
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virtual source model for an independent monte carlo radiation dose qa software  (Virtual Phantoms Inc)
90
Virtual Phantoms Inc virtual source model for an independent monte carlo radiation dose qa software
Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the <t>source/drain</t> terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the <t>Virtual</t> Source (VS) <t>model</t> and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length
Virtual Source Model For An Independent Monte Carlo Radiation Dose Qa Software, supplied by Virtual Phantoms Inc, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/virtual+source+model/pm32634280-30563-11-91?v=Virtual+Phantoms+Inc
Average 90 stars, based on 1 article reviews
virtual source model for an independent monte carlo radiation dose qa software - by Bioz Stars, 2026-06
90/100 stars
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virtual source (vs) model  (BioMimetic Therapeutics)
90
BioMimetic Therapeutics virtual source (vs) model
Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the <t>source/drain</t> terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the <t>Virtual</t> Source (VS) <t>model</t> and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length
Virtual Source (Vs) Model, supplied by BioMimetic Therapeutics, used in various techniques. Bioz Stars score: 90/100, based on 1 PubMed citations. ZERO BIAS - scores, article reviews, protocol conditions and more
https://www.bioz.com/product/virtual+source+model/10__1038_slash_s41928___020___00466___9-192-0-4?v=BioMimetic+Therapeutics
Average 90 stars, based on 1 article reviews
virtual source (vs) model - by Bioz Stars, 2026-06
90/100 stars
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Image Search Results


Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the source/drain terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the Virtual Source (VS) model and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length

Journal: Nature Communications

Article Title: A biomimetic 2D transistor for audiomorphic computing

doi: 10.1038/s41467-019-11381-9

Figure Lengend Snippet: Artificial coincidence detector neuron. a Schematic and ( b ) Transfer characteristics of a fully top-gated MoS 2 field effect transistor (FET) with 120 nm of hydrogen silsesquioxane (HSQ) as the top-gate dielectric and Ni/Au as the top-gate electrode. MoS 2 channel is few nm thick and is connected to Ni/Au metal contacts that serve as the source/drain terminals. The device is normally ON at V TG = 0 V and can be switched OFF by applying V TG = −30 V with a high current ON/OFF ratio of ~10 6 . c Truth table showing that the device can be regarded as a one-input-one-output digital element. d Schematic of an MoS 2 FET with two split-gates separated by an ungated region of width W UG = 200 nm. e Transfer characteristics of the split-gated device when one of the split-gates is swept from 0 V to −30 V while the other split-gate is held at a constant bias of 0 V (red curve) and when both split-gates are simultaneously swept from 0 V to −30 V (blue curve). f Truth table showing that the split-gated device can be treated as two-input-one-output digital element with NAND logic. g Random sequence of voltage pulses of magnitude −30 V are applied to the two spilt gates, V SG1 and V SG2 . The output current is completely suppressed or inhibited only when the spikes coincide suggesting that the split-gated MoS 2 FET can be used to mimic neural coincidence. h COMSOL multiphysics simulation of the 2D potential profile when −30 V bias is applied to either one or both split-gates. i 1D potential profile along the channel width for different combinations of the two split-gate biases shows the effect of fringing electric field and capacitive coupling between the two split-gate electrodes. The channel potential in the ungated region between the split-gates is finite under all conditions. The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the Virtual Source (VS) model and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations. We have used a modified VS model to calculate channel resistance, R CH that captures the variation in the electrostatic potential along the width of the channel and also to account for the access resistance, R A due to the ungated region along the channel length

Article Snippet: The effect is more dramatic when V SG1 = V SG2 = −30 V. j Simulated transfer characteristics of the split-gated MoS 2 FET using the Virtual Source (VS) model and the electrostatic potential profile, V CH ( x ) along the channel width obtained from the COMSOL simulations.

Techniques: Sequencing, Modification